Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).


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    Titel :

    Growing Cobalt Silicide Columns In Silicon


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1991-06-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


    Subsurface Growth Of Silicide Structures In Silicon

    Fathauer, Robert W. / George, Thomas / Pike, William T. et al. | NTRS | 1993



    Cobalt 60 inspection uses are growing

    Brewer, D.E. | Engineering Index Backfile | 1953



    Self-organized iron silicide nano dots on silicon (001) substrate

    Chou, L. J. / Chuen, Y. L. / Guo li Taiwan da xue et al. | British Library Conference Proceedings | 2003