Reverse-bias safe operating area (RBSOA) of high-power Darlington transistors is characterized using a 120 A/1000 V nondestructive reverse-bias second breakdown tester designed and fabricated at Virginia Polytechnic Institute and State University. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.


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    Titel :

    Nondestructive characterization of RBSOA of high-power bipolar transistors


    Beteiligte:
    Jovanovic, M. M. (Autor:in) / Lee, F. C. (Autor:in) / Chen, D. Y. (Autor:in)


    Erscheinungsdatum :

    1986-03-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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