Varasitic parameters will affect the optimum performance of Silicon Carbide (SiC) power converter. A combination of boundary analysis and multi-resolution analysis methods is proposed in this paper to extract parasitic parameters of SiC power converters. Parasitic parameters, extracted through combination of structure analysis and optimal computation are realized by the boundary analysis method and multi-resolution analysis method. The efficiency of the parasitic parameters' extraction is greatly enhanced by the proposed method.


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    Titel :

    Extraction of parasitic parameters from silicon carbide power converter using multi-resolution analysis method


    Beteiligte:
    Yin, Yitong (Autor:in) / Oladele, Olanrewaju Kabir (Autor:in) / Hua, Chengchao (Autor:in) / Lin, Huapeng (Autor:in) / Hu, Xuanyang (Autor:in)


    Erscheinungsdatum :

    01.08.2017


    Format / Umfang :

    546320 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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