We demonstrate the time-domain measurement of the dynamic response of heterojunction bipolar transistors (HBT) and uni-travelling carrier photodiodes (UTC-PD) with sub-picosecond resolution. For the HBT, the stimulus is a step applied to the base. For the UTC-PD, we use optical excitation with 150 fs pulses at 1.55 ¿m. The detection of the electrical response is done using an electroabsorption sampling technique.


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    Titel :

    Sub-Picosecond Time-Domain Measurement of Heterojunction Bipolar Transistors and Photodiodes


    Beteiligte:
    Beck, A. (Autor:in) / Lampin, J.-F. (Autor:in) / Zaknoune, M. (Autor:in) / Desplanque, L. (Autor:in) / Mollot, F. (Autor:in)


    Erscheinungsdatum :

    2006-09-01


    Format / Umfang :

    1049134 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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