We demonstrate the time-domain measurement of the dynamic response of heterojunction bipolar transistors (HBT) and uni-travelling carrier photodiodes (UTC-PD) with sub-picosecond resolution. For the HBT, the stimulus is a step applied to the base. For the UTC-PD, we use optical excitation with 150 fs pulses at 1.55 ¿m. The detection of the electrical response is done using an electroabsorption sampling technique.
Sub-Picosecond Time-Domain Measurement of Heterojunction Bipolar Transistors and Photodiodes
2006-09-01
1049134 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
A new InGaP/AlGaAs/GaAs Composite-Emitter Heterojunction Bipolar Transistors
British Library Conference Proceedings | 2002
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