The tradeoffs encountered in monolithic integration of p-i-n photodetectors and heterojunction bipolar transistors are described. For further improving the frequency performance of the individual transistors, the main challenges related to epitaxy are shortening of the base transit time by band gap engineering, and the proper grading of the base emitter and base collector junctions.
Optimization of InP/GaInAs heterojunction bipolar transistors and phototransistors
01.01.2002
236245 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Analytical Modeling of Speed Response of Heterojunction Bipolar Phototransistors
| British Library Online Contents | 2007
Performance Enhancement of GaInP/GaAs Heterojunction Bipolar Phototransistors Using DC Base Bias
| British Library Online Contents | 1998
Physical Modeling of Traveling-Wave Heterojunction Phototransistors
| British Library Online Contents | 2008
Bipolar phototransistors reliability assessment for space applications
| Tema Archiv | 2007