Terahertz (THz) communication systems require the development of ultra-fast transistor technologies for VCO sources with power amplification (>50mW) and low noise receiver (NF<8dB). InP-based HBTs are the most promising technology for achieving THz operation based on the current gain cutoff frequency versus breakdown voltage trend for various transistor technologies and material systems1. It is the only known transistor technology can deliver THz bandwidth with output breakdown voltage greater than IV, hence, a potential higher power transistor amplifier can be realized.


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    Titel :

    Toward THz Transistor: Pseudomorphic Heterojunction Bipolar Transistors (PHBT)


    Beteiligte:
    Feng, Milton (Autor:in) / Snodgrass, William (Autor:in)


    Erscheinungsdatum :

    2006-09-01


    Format / Umfang :

    1199814 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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