This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design. This laser structure was grown by solid source molecular beam epitaxy. With this improved quantum dot DFB laser with shorter facet-coated cavities a significant improvement in the dynamic properties is achieved.


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    Titel :

    1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design


    Beteiligte:
    Deubert, S. (Autor:in) / Krebs, R. (Autor:in) / Reithmaier, J.P. (Autor:in) / Forchel, A. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    81330 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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