A new ECTT-DHPT with InGaAsP(¿=1.55¿m) as base and InGaAsP(¿=1.3¿m) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when Vce=1V) were obtained.


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    Titel :

    A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics


    Beteiligte:
    Wang, L. S. (Autor:in) / Zhao, L. J. (Autor:in) / Pan, J. Q. (Autor:in) / Zhang, W. (Autor:in) / Wang, H. (Autor:in) / Liang, S. (Autor:in) / Zhu, H. L. (Autor:in) / Wang, W. (Autor:in)


    Erscheinungsdatum :

    2008-12-01


    Format / Umfang :

    209524 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch