A new ECTT-DHPT with InGaAsP(¿=1.55¿m) as base and InGaAsP(¿=1.3¿m) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when Vce=1V) were obtained.
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
2008-12-01
209524 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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