High quality InN films were grown by rf-plasma assisted molecular beam epitaxy. The fundamental bandgap was evaluated to be 0.7 eV. The room temperature photoluminescence (PL) intensity was improved with the narrow PL-FWHM of 88 meV by optimizing the V/III supply ratio and buffer layer. This result suggests that InN is a new attractive material for optical devices in the optical communication wavelength.
High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel materials for optical communication
2003-01-01
81157 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2003
|Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy
Online Contents | 1995
|Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy
British Library Conference Proceedings | 2008
|