High quality InN films were grown by rf-plasma assisted molecular beam epitaxy. The fundamental bandgap was evaluated to be 0.7 eV. The room temperature photoluminescence (PL) intensity was improved with the narrow PL-FWHM of 88 meV by optimizing the V/III supply ratio and buffer layer. This result suggests that InN is a new attractive material for optical devices in the optical communication wavelength.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel materials for optical communication


    Beteiligte:
    Kawai, M. (Autor:in) / Kikuchi, A. (Autor:in) / Kishino, K. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    81157 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel material for optical communication

    Kawai, M. / Kikuchi, A. / Kishino, K. et al. | British Library Conference Proceedings | 2003



    High-quality red laser material grown by solid-source molecular beam epitaxy

    Toikkanen, L.J. / Tukiainen, A.K. / Hirvonen, I.A.T. et al. | IEEE | 2003



    Raman Scattering from GaAs Nanowires Grown by Molecular Beam Epitaxy

    Begum, N. / Bhatti, A.S. / Piccin, M. et al. | British Library Conference Proceedings | 2008