I evaluate the factors that cause gain saturation-number of dot states, proximity of wetting layer and a non-thermal carrier distribution-using measurements of gain and carrier distribution in InGaAs quantum dot laser structures.


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    Titel :

    Gain and carrier distribution in InGaAs quantum dot lasers


    Beteiligte:
    Smowton, P.M. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    68950 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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