Summary form only given. The authors apply a time-resolved coherent far-infrared technique for the measurement of a dielectric thin film deposited on a silicon wafer in the GHz-THz frequency range. Our method utilizes the phase flip of electromagnetic waves near the Brewster angle. For reflection in a thin film near the Brewster angle, the superposition of two out-phase waves enforces the total change of the waveform. By analyzing the retardation and modification of this phase flip directly in time, we can obtain the index of refraction of a fluorinated poly(arylether) (FLARE) film in the far-infrared frequency range.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Thin film measurement on semiconductor surface in GHz-Thz frequency range


    Beteiligte:
    Ming Li, (Autor:in) / Cho, G.C. (Autor:in) / Wang, S.-Q. (Autor:in) / Kenndy, J.T. (Autor:in) / Lu, T.-M. (Autor:in) / Zhang, X.-C. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    267866 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Thin film semiconductor NOx sensor

    Chang,S.C. / General Motors Res.Lab.,US | Kraftfahrwesen | 1980


    Thin Film Semiconductor NOx Sensor

    Chang, Shih-Chia | SAE Technical Papers | 1980


    Thin film semiconductor NOx sensor

    Shih-Chia Chang | Tema Archiv | 1980


    Semiconductor superlattice frequency multiplier for the submillimeter wavelength range

    Renk, K.F. / Ernst, T. / Muthmann, M. et al. | IEEE | 2004