In this paper, experimental results on giant electro-optical nonlinearities in a periodic multilayered structure are presented. The device consists of undoped GaAs and AlAs layers with nominal thicknesses of 58 nm and 69 nm, respectively. In summary, it is shown that hybrid multilayered semiconductor structures exhibit clear electro-optical modulation and giant optical nonlinearities leading to optical bistabilities at extremely low optical intensities. Thus, such devices offer potential applications for parallel signal processing.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Nonlinear optical and electro-optical characteristics of hybrid AlAs/GaAs multilayered structures


    Beteiligte:
    Knigge, S. (Autor:in) / Niederland, D. (Autor:in) / Wicke, M. (Autor:in) / Bussek, P. (Autor:in) / Jager, D. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 336-337 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    181269 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Nonlinear Optical and Electro-Optical Characteristics of Hybrid AlAs/GaAs Multilayered Structures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Novel GaAs-AlAs and Si-SiGe quantum well structures with large optical nonlinearities [2212-20]

    Jaros, M. / Cusack, M. A. / Shaw, M. J. et al. | British Library Conference Proceedings | 1994


    Vertikaler Transport in GaAs-AlAs-Übergitterstrukturen

    Grahn, Holger T. / Grahn, Holger Theodor | TIBKAT | 1992



    Stress Measurements in Oxidized GaAs/AlAs Structures by Micro-Raman Spectroscopy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998