Selective-area epitaxy has been shown to be an effective way to produce a monolithic multiple-wavelength laser source suitable for wavelength division multiplexing (WDM). In general the channel outputs of multiple-wavelength laser arrays have a spatial separation that is large in comparison to the core diameter of a single mode fiber. Therefore, external coupling is required to combine the outputs into a single fiber. In this work, we report the fabrication of a dual-channel strained-layer, InGaAs-GaAs-AlGaAs quantum well WDM laser with integrated waveguide output coupler by an atmospheric pressure metal-organic chemical vapor deposition (MOCVD) three-step selective-area growth process.


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    Titel :

    Dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD


    Beteiligte:
    Lammert, R.M. (Autor:in) / Cockerill, T.M. (Autor:in) / Forbes, D.V. (Autor:in) / Coleman, J.J. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 379-380 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    198925 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch