In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.
Properties of radiative recombination in GaAsN epilayers
2002-01-01
179575 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Properties of Radiative Recombination in GaAsN Epilayers
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