In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.


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    Titel :

    Properties of radiative recombination in GaAsN epilayers


    Beteiligte:
    Sun, B.Q. (Autor:in) / Gal, M. (Autor:in) / Gao, Q. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    179575 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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