This paper reports the progress in D-band CW silicon IMPATT diode. The small-signal. computer simulation of a diode has been performed. The preliminary experiments of the single-drift IMPATT diode show a aw output power of 73 mW at 116.7GHz and 34mW at 126GHz, respectively.


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    Titel :

    D - band silicon impatt diode


    Beteiligte:
    Li-Rong Jin, (Autor:in) / Mao-Sen Wang, (Autor:in) / Ri-Hui Huang, (Autor:in) / Wen-Xing Zhang, (Autor:in) / Zhi-Yuan Huang, (Autor:in) / Bao-Wen Qiao, (Autor:in) / Dai-Yun Chen, (Autor:in)


    Erscheinungsdatum :

    1989-01-01


    Format / Umfang :

    161552 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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