Recently, a new technology process for manufacturing packaged millimeter-wave silicon IMPATT diodes has been introduced. Detailed measurement and simulation results for these devices, operating in the D-band frequency range, are compared here. Results are obtained in rectangular, reduced height, waveguide resonators. CW RF-output power of more than 100 mW at 135 GHz and 50 mW at 150 GHz are reported.
Measurement results of packaged millimeter-wave silicon IMPATT diodes
2002-01-01
144592 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Measurement Results of Packaged Millimeter-Wave Silicon IMPATT Diodes
British Library Conference Proceedings | 2002
|IEEE | 1989
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