Recently, a new technology process for manufacturing packaged millimeter-wave silicon IMPATT diodes has been introduced. Detailed measurement and simulation results for these devices, operating in the D-band frequency range, are compared here. Results are obtained in rectangular, reduced height, waveguide resonators. CW RF-output power of more than 100 mW at 135 GHz and 50 mW at 150 GHz are reported.


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    Titel :

    Measurement results of packaged millimeter-wave silicon IMPATT diodes


    Beteiligte:
    Luschas, M. (Autor:in) / Judaschke, R. (Autor:in) / Luy, J.-F. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    144592 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    Luschas, M. / Judaschke, R. / Luy, J.-F. | British Library Conference Proceedings | 2002


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