We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.


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    Titel :

    Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers


    Beteiligte:


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    175743 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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