630-nm band AlGaInP laser diodes are very attractive light sources for high-density optical disk systems. These visible laser diodes are required for high performances such as self-pulsating operation, low threshold current, and so on. Recently, we developed self-pulsating 630-nm band AlGaInP laser diodes with a tensile strained multi-quantum well (S-MQW) active layer by optimizing structural parameters. However, the threshold current was not sufficiently low because of the thick active layer. On the other hand, we have investigated a strain-compensated multi-quantum well (SC-MQW) structure and achieved a single longitudinal mode visible laser diode with a low threshold current. In this study, we report the self-pulsating 630-nm band AlGaInP laser diodes with the lowest threshold current by introducing the SC-MQW structure into the active layer for the first time.


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    Titel :

    Self-pulsating 630-nm band strain-compensated MQW AlGaInP laser diodes


    Beteiligte:
    Bessho, Y. (Autor:in) / Uetani, T. (Autor:in) / Suzuki, J. (Autor:in) / Shono, M. (Autor:in) / Ibaraki, A. (Autor:in) / Yagi, K. (Autor:in) / Yodoshi, K. (Autor:in) / Niina, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    149025 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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