The commonly used technique for carrier lifetime measurements in semiconductor lasers is corrected to take account of rapidly varying device impedance. Carrier lifetimes obtained with the new method provide vastly different values of carrier density and resolve inconsistencies in interpretation of recombination and spontaneous emission presented in the literature.
Correction of carrier lifetime measurements of semiconductor lasers
01.01.1995
172740 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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