Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics are strongly affected by the tunnel injection structure. A high characteristic temperature of 164K is obtained.
Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers
01.01.2005
163938 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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