Summary form only given. In this paper, we review our results on 1.2 /spl mu/m GaInAs/GaAs VCSELs including their temperature lasing characteristics and wavelength engineering on patterned substrates.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    1200 nm highly strained GaInAs/GaAs surface emitting lasers


    Beteiligte:
    Koyama, F. (Autor:in) / Miyamoto, T. (Autor:in) / Arai, M. (Autor:in) / Kondo, T. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    148724 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    TuS2 1200 nm Highly Strained GaInAs/GaAs Surface Emitting Lasers

    IEEE | British Library Conference Proceedings | 2002


    Modulation Characteristics of Highly Strained 1100nm GaInAs/GaAs Vertical Cavity Surface Emitting Laser on GaAs (311)B

    Arai, M. / Nishiyama, N. / Azuchi, M. et al. | British Library Conference Proceedings | 2001




    Highly Strained GaInAs/GaAs 1.21mum Vertical Cavity Surface Emitting Laser with Single-Mode Output Power of 3mW

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004