Summary form only given. In this paper, we review our results on 1.2 /spl mu/m GaInAs/GaAs VCSELs including their temperature lasing characteristics and wavelength engineering on patterned substrates.
1200 nm highly strained GaInAs/GaAs surface emitting lasers
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 1 ; 271-272 vol.1
01.01.2002
148724 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
TuS2 1200 nm Highly Strained GaInAs/GaAs Surface Emitting Lasers
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