Although lasing involving transitions between higher lying subbands in quantum well structures has been observed, it usually occurs in lasers with short cavities (L<1 mm). In typically QW lasers with long cavities (L>1 mm), the ground state transition is almost always the dominant lasing process. To study the feasibility of selective injection of carriers into a higher lying subbands, we investigated the electroluminescence properties of some resonant tunneling GaAs single quantum well structures. We observed lasing via higher lying subbands instead of the ground state in 1 mm long lasers.
Enhanced stimulated emission of excited states in quantum wells by resonant tunneling
Proceedings of LEOS'94 ; 2 ; 387-388 vol.2
01.01.1994
147884 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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