Although lasing involving transitions between higher lying subbands in quantum well structures has been observed, it usually occurs in lasers with short cavities (L<1 mm). In typically QW lasers with long cavities (L>1 mm), the ground state transition is almost always the dominant lasing process. To study the feasibility of selective injection of carriers into a higher lying subbands, we investigated the electroluminescence properties of some resonant tunneling GaAs single quantum well structures. We observed lasing via higher lying subbands instead of the ground state in 1 mm long lasers.


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    Titel :

    Enhanced stimulated emission of excited states in quantum wells by resonant tunneling


    Beteiligte:
    Lutz, C.R. (Autor:in) / Agahi, F. (Autor:in) / Kei May Lau (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 387-388 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    147884 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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