This paper discusses attack vulnerabilities in Resistive Random Access Memory (ReRAM) devices that can be potentially triggered by Trojan circuits. Systematic experiments were performed on Ru/MgO/Ti/W based ReRAM devices in 1R and 1T1R configurations. Our observations indicate that vulnerabilities in ReRAM include destabilization of filament due to current overshoot, local heating, introduction of parasitic capacitances, and glitches in the source voltages. These studies are critical to design more robust ReRAM devices that are immune to hardware attacks.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Understanding vulnerabilities in ReRAM devices for trust in semiconductor designs


    Beteiligte:
    Schultz, T. (Autor:in) / Jha, R. (Autor:in)


    Erscheinungsdatum :

    01.06.2017


    Format / Umfang :

    307013 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Single-Event Effect Performance of a Commercial ReRAM

    Chen, Dakai / Kim, Hak S. / Phan, Anthony et al. | NTRS | 2014


    Single-Event Effect Response of a Commercial ReRAM

    Chen, Dakai / Label, Kenneth A. / Kim, Hak et al. | NTRS | 2014


    ReRAM-Based Intrinsically Secure Memory: A Feasibility Analysis

    Olexa, Nicholas / Jha, Rashmi / Mandal, Soumyajit et al. | IEEE | 2019


    Trust in FP Designs at JPL

    Wertz, Julie A | NTRS | 2021


    Mit ReRAM und MRAM in eine schnellere Zukunft

    British Library Online Contents | 2013