Resistive random access memory (ReRAM) is an attractive candidate for application in next-generation nonvolatile (NV) memory devices for both aerospace and conventional commercial applications. ReRAM has several intrinsic advantages over other NV memory technologies due its simple metal-insulator-metal structure including high storage density, low power consumption, high switching speed and high endurance. Most importantly, there are indications that ReRAM is an intrinsically radiation-hard device due to its defect-moderated, resistive switching mechanism and potentially well suited for applications in aerospace or other radiation intensive environments. We present a study of the effects of ion irradiation on HfO2-based ReRAM devices after irradiation to total ionizing doses ranging from ∼ 105 to ∼ 1011 rad(Si), with various ion species - proton, helium, nitrogen, neon, and argon. HfO2-based ReRAM devises were programmed into high resistance states (HRS, off states) and low resistance states (LRS, on states) before radiation exposure. It was found that static off- and on- state resistances decreased dramatically when the total ionizing dose is above a threshold value ∼ 1 × 1010 rad(Si), independent of the ion specie. Moreover, more than 50% of off-state devices changed into the on-state above this threshold dose, causing errors in resistance state. However, ALL switching errors were shown to be correctable via a programmed RESET process, after which all ReRAM devices resumed normal resistive switching function with only slight variations in set/reset voltages and dynamic on-/off-state resistances. The universal dose behavior is consistent with recent modeling of ReRAM conductive filament formation via trap-assisted-tunneling (TAT) and thermal runaway of oxygen vacancy defect formation. Overall, this study suggests that, for HfO2-based ReRAMs, a universal dose threshold behavior associated with ion irradiation can be used to predict irradiation-induced soft errors in resistance state switching and can be used for HfO2-ReRAM application design in space systems.


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    Titel :

    Universal-ion irradiation dose threshold and error recovery in HfO2 resistance random access memory


    Beteiligte:
    He, Xiaoli (Autor:in) / Geer, Robert E. (Autor:in)


    Erscheinungsdatum :

    2014-03-01


    Format / Umfang :

    1034295 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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