Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used to store a bit of information. The GMR material is magneto-resistive and changes resistance when the magnetization of the layers is changed by a magnetic field. The GMR effect produces a signal that distinguishes between a "1" and "0." GMRAM is a chip that integrates magnetic and semiconductor devices in an architecture. Attributes for GMRAM make it desirable as a nonvolatile memory.
GMRAM: giant magneto-resistance random-access memory
2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484) ; 5 ; 371-376 vol.5
01.01.2000
477896 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
GMRAM: Giant Magento-resistance Random-Access Memory
British Library Conference Proceedings | 2000
|Holographic random access memory
IEEE | 2000
|Holographic Random Access Memory
British Library Conference Proceedings | 2000
|Online Contents | 1995
NTRS | 1995
|