We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 /spl mu/m vertical emitting lasers.
Novel electronic and optoelectronic properties of GaInNAs and related alloys
2003-01-01
222541 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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