In this work, 8/spl times/8 and 4/spl times/8 arrays of 850 nm oxide-confined VCSELs with 250 /spl mu/m device pitch are directly hybridized onto silicon fanout chips by means of an indium solder based flip-chip technology. Using this structure, digital data transmission experiments are conducted, which demonstrates that quasi error-free (bit error rate <10/sup -12/) 10 Gbit/s transmission can be achieved.


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    Titel :

    Low thermal resistance flip-chip bonding of 850 nm 2-D VCSEL arrays capable of 10 Gbit/s/ch operation


    Beteiligte:
    Roscher, H. (Autor:in) / Michalzik, R. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    177193 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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