We briefly report the optoelectronic characteristics of Schottky-type photodiode fabricated on the silicon-implanted borosilicate glass (SiO/sub 2/:Si/sup +/)-a novel nano-crystallite Si semi-conducting material. The dark current, photocurrent and breakdown voltage of the SiO/sub 2/:Si/sup +/ photodiode illuminated by Ar/sup +/ laser are measured. The effect of annealing time on the semi-conducting property of such material is characterized.


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    Titel :

    Photocurrent response of Schottky diode on silicon-implanted SiO/sub 2/ substrate


    Beteiligte:
    Gong-Ru Lin, (Autor:in) / Chin-Chia Hsu, (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    160432 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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