A silicon carbide semiconductor device includes an n-type silicon carbide semiconductor substrate, a drain electrode electrically connected to a rear face, an n-type semiconductor layer having a second impurity concentration lower than the first impurity concentration, a p-type first semiconductor region, an n-type second semiconductor region, and an n-type third semiconductor region. A trench is formed having a gate electrode therein in which the bottom face of the trench contacts the p-type semiconductor region. A metal layer is electrically connected to the third semiconductor region, and a source electrode electrically connects the second semiconductor region and the metal layer to each other.
Silicon carbide semiconductor device with horizontal and vertical current flow
29.09.2020
Patent
Elektronische Ressource
Englisch
IPC: | H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern |
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