Properties of Radiative Recombination in GaAsN Epilayers
Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia
2002-01-01
4 pages
IEEE cat no 02EX601
Aufsatz (Konferenz)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Properties of radiative recombination in GaAsN epilayers
IEEE | 2002
|Growth and Characterization of GaAsN Bulk Layer and (In)GaAsN Quantum-Well Structures
British Library Conference Proceedings | 2002
|Optical properties of type-II InGaN/GaAsN/GaN quantum wells
British Library Online Contents | 2009
|Optical properties of type-II InGaN/GaAsN/GaN quantum wells
British Library Online Contents | 2009
|