Low-Threshold Lasing at 1.3 m from GaAsSb Quantum Wells Directly Grown on GaAs Substrates
Annual meeting; 11th, IEEE: Lasers and Electro-Optics Society; LEOS '98 ; 1998 ; Orlando; FL
01.01.1998
2 pages
IEEE cat no: 98CH36243
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
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