Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser [2886-549]
Conference, Semiconductor lasers II ; 1996 ; Beijing
1996-01-01
6 pages
Aufsatz (Konferenz)
Englisch
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0.808-m InGaAsP/GaAs SCH lasers [2886-566]
British Library Conference Proceedings | 1996
|LPE growth of high-power InGaAsP/GaAs SCH SQW lasers [2886-547]
British Library Conference Proceedings | 1996
|High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]
British Library Conference Proceedings | 1996
|1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]
British Library Conference Proceedings | 1996
|DataCite | 1900