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Nonparabolicity effect upon the electron mobility in PbTe/PbSnTe quantum wells [3182-36]
Narrow-gap alloys (Pb,Sr)ge and (Pb,Eu)Se for optoelectronic devices [3182-29]
Tunnel surface recombination in optoelectronic device modeling [3182-22]
Infrared thermal detectors versus photon detectors: I. Pixel performance [3182-02]
Laser molecular beam epitaxy of BaTiO~3 thin films [3182-63]
Investigation of MIS structures on Mn~xHg~1~-~xTe [3182-15]
Intrinsic quantity of chaos in photodetecting [3182-11]
Epitaxial structures based on narrow-band-gap InAs~1~-~x~-~ySb~xBi~y solid solutions [3182-58]
Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors [3182-56]
Pyroelectricity: some new research and application aspects [3182-12]
Thermodynamic aspects of manufacturing of (Hg,Mn)Te/CdTe structures [3182-60]
Photoconductivity of a semiconductor with transverse gradient of electric field [3182-28]
PbSnSe-on-Si: material and IR device properties [3182-03]
Ge vapor-phase doping of CdTe and Cd~0~.~9~6Zn~0~.~0~4Te crystals [3182-62]
Peculiarities of radiative recombination in Vanadium-doped CdTe crystals [3182-43]
Photoluminescence and Raman scattering in In~0~.~5~3Ga~0~.~4~7As/InP:Dy [3182-20]
Correlation between crystal defects and properties of CdTe:Ge radiation detectors [3182-13]
Neue Interieurdesigns - Neue Chancen für neue Werkstoffe
Reflection spectrum of high-conductivity solid solutions [3182-46]
Entwicklungen in der Werkstofftechnik für die Mobilität von morgen
Percolation effects in Pb~1~-~xGe~xTe solid solutions [3182-57]
Influence of laser irradiation on Hg~1~-~xMn~xTe photoelectrical properties [3182-54]
Irreversible gigantic modification of semiconductor optical properties [3182-51]
Investigations of transport phenomena in narrow-gap semiconductors [3182-49]
Nonlinear optical transmission of Cd~0~.~2Hg~0~.~8Te single crystals at room temperature [3182-25]
Liquid phase epitaxial III-V technology for photodetectors manufacturing [3182-21]
Durability of adhesive bonded honeycombs sandwich in accelerated adverse environments
Interaction of II-VI, III-VI and IV-VI group semiconductors with metals [3182-64]
Magnetopolaron effect in diluted semimagnetic semiconductors [3182-45]
Photovoltaic effect in graded-band-gap layers with intrinsic type of conductivity [3182-38]
Band structure engineering of InAs for improved electron transport characteristics [3182-26]
Photoelectric properties of Pb~1~-~x~-~yGe~ySn~xTe:In epitaxial films [3182-16]
Injection-amplification IR photodiodes [3182-08]
Thermal conductivity of PbTe-MnTe solid solutions [3182-44]