Band structure engineering of InAs for improved electron transport characteristics [3182-26]
Conference, Material science and material properties for infrared optoelectronics ; 1996 ; Uzhgorod; Ukraine
1997-01-01
10 pages
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
DataCite | 1906
Epitaxial structures based on narrow-band-gap InAs~1~-~x~-~ySb~xBi~y solid solutions [3182-58]
British Library Conference Proceedings | 1997
|AIAA-2004-3182 GPS CDMA Noise Analysis
British Library Conference Proceedings | 2004
|British Library Conference Proceedings | 1997
|Investigations of transport phenomena in narrow-gap semiconductors [3182-49]
British Library Conference Proceedings | 1997
|