The high electrical conversion performance and radiation resistance of InP solar cells were discovered during the last decade. The combination of these two characteristics make InP a very attractive material for space solar cells. To date, the best performance results for both homo-epitaxial and hetero-epitaxial InP solar cells were achieved using a n/p configuration. The p/n configuration is desirable for hetero-epitaxial growth on inexpensive, strong, light weight, group IV substrates such as Si and Ge. We have succeeded in developing p/n configuration homo-epitaxy InP solar cells with begining-of-life AM0 efficiency values exceeding 17.6%. The high efficiency values resulted from improved emitter performance due to a reduction of Zn interstitial defects in the p-type emitter. Preliminary 3 MeV proton irradiation resistance data are presented which show the high efficiency p/n cells retain 75% of begining-of-life power after 7*1011 protons/cm2 fluence.


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    Title :

    Improved performance of p/n InP solar cells


    Contributors:
    Hoffman, R.W. jun. (author) / Fatemi, N.S. (author) / Jenkins, P.P. (author) / Weizer, V.G. (author) / Stan, M.A. (author) / Ringel, S.A. (author) / Scheiman, D.A. (author) / Wilt, D.M. (author) / Brinker, D.J. (author) / Walters, R.J. (author)


    Publication date :

    1997


    Size :

    4 Seiten, 10 Quellen




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English






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