In this paper, we present data on the electrical properties of 50 mu m thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1*1013 p/cm2 and irradiated with 1 MeV electrons with a fluence exceeding 1*1016 e/cm2, and discuss the anomalous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carrier density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the large-fluence irradiation.


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    Title :

    Radiation degradation of large fluence irradiated space silicon solar cells


    Contributors:
    Hisamatsu, T. (author) / Kawasaki, O. (author) / Matsuda, S. (author) / Nakao, T. (author) / Wakow, Y. (author)

    Published in:

    Publication date :

    1998


    Size :

    8 Seiten, 8 Quellen




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English





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