A description is given of a fully protected bipolar MOSFET controller which is designed to drive and protect current-sensing or standard DMOS (double-diffused metal-oxide-semiconductor) field-effect transistors in either high-side or low-side configurations. The IC is designed for use in automotive environments, and therefore protects both the discrete MOSFET and the driver IC from overvoltage, overtemperature, and short-circuit conditions. The circuit operates from 4.5 to 28 V, draws 20- mu A off-state current, and gives diagnostic feedback via an error pin.
A fully-protected bipolar MOSFET controller
Ein vollständig geschützter Bipolar-MOSFET-Controller
1990
4 Seiten, 3 Quellen
Conference paper
English
KRAFTFAHRZEUGELEKTRIK , ISOLIERSCHICHT-FET , SCHUTZ , FELDEFFEKTTRANSISTOR , UEBERSPANNUNG (ELEKTRISCH) , BIPOLARSCHALTUNG , MOS-FET , UEBERHITZUNG , LEISTUNGSHALBLEITERBAUELEMENT , ELEKTRISCHE ABSCHIRMUNG , ZUVERLAESSIGKEIT , TREIBERSTUFE (VERSTAERKER) , SMART-POWER-TECHNIK , BIPOLARE INTEGRIERTE SCHALTUNG , UEBERTEMPERATUR
British Library Online Contents | 2006
NTRS | 1986
|New Rad-Hard STRH3260L6 Bipolar and STRH100N10 MOSFET Power Transistors
British Library Conference Proceedings | 2011
|