The authors reports on a panel session which was organized to discuss developments in power semiconductor technology suitable for automotive applications. The panel was chaired by the author, and the panel members were Kailash Jain, King Owyang, Miro Glogolja, Larry Latham, and Bill Dunn. The topics covered were device breakdown voltage specification, the best devices for low and high voltages, discrete vs. monolithic chip partitioning, the possibility of a generic chip, and the possible evolution of application-specific ICs (ASIC). A summary of the general conclusions made by the panel are provided.
Future directions in semiconductor technology for automotive power electronics
Zukünftige Entwicklungen in der Halbleitertechnologie für die automotive Leistungselektronik
1989
1 Seite
Conference paper
English
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