The thermal annealing of GaAs concentrator cells for space power after electron irradiation is reported. Results are given for cells annealed at 150 degrees C, 200 degrees C, and 250 degrees C. Isochronal annealing was done for 20 min intervals up to 350 degrees C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3*1015 or 1*1016 e/cm2 recover to similar unannealed fractions. Significant annealing is seen starting at 150 degrees C, although very long times are required.


    Access

    Access via TIB

    Check availability in my library


    Export, share and cite



    Title :

    Thermal annealing of GaAs concentrator solar cells


    Additional title:

    Wärmebehandlung von GaAs-Sonnenzellen für konzentriertes Licht


    Contributors:


    Publication date :

    1989


    Size :

    6 Seiten, 8 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





    Solar thermal concentrator

    Bonometti, J / Hawk, C | AIAA | 1995


    Characteristics of GaAs-based concentrator cells

    Araki, Kenji | Online Contents | 2001


    32.3 percent efficient triple junction GaInP2/GaAs/Ge concentrator solar cells

    Lillington, D. / Cotal, H. / Ermer, J. et al. | AIAA | 2000