Several monolithic HEMT (high electron mobility transistors) low-noise amplifiers (LNAs), designed for 7-11-GHz airborne radar, 2-18-GHz electronic warfare, and 20-GHz military satellite communications applications have demonstrated outstanding performance. Two-stage MMICs (monolithic microwave integrated circuits) achieve as low as 1.2 dB noise figure at 10 GHz with 15 dB gain, and typically less than 1.8 dB noise figure from 7-11 GHz. A distributed amplifier demonstrates 3.0-5.2 dB noise figure with around 11 dB gain from 2-18 GHz. Finally, a three-stage MMIC achieves less than 2.0 dB noise figure from 18-23 GHz with 29 dB associated gain, representing the highest level of performance yet reported for a low-noise MMIC.


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    Title :

    Monolithic HEMT LNAS for radar, EW, and COMM


    Additional title:

    Monolithischer HEMT LNAS fuer Radar, elektronische Kampffuehrung und Satellitenkommunikation


    Contributors:
    Upton, M.A.G. (author) / Snow, K.H. (author) / Goldstick, D.I. (author) / Kong, W.M. (author) / Kao, M.Y. (author) / Kopp, W.F. (author) / Ho, P. (author) / Tessmer, G.J. (author) / Lee, B.R. (author) / Wypych, K.A. (author)


    Publication date :

    1989


    Size :

    5 Seiten, 8 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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