Samples of the 54F109, 54AS109, 54ALS109, and the 54HCT109 advanced TTL devices, as well as the 54F374, 54AS374, 54ALS374, and the 54AHCT374 CMOS devices were tested for single-event upset sensitivity at the Berkeley Cyclotron. The results indicate that the 54AHCT109 possesses a linear energy transfer threshold an order to magnitude greater and a SEU cross section that is 20 times less than its advanced TTL counterparts. The same trend was shown for the 54AHCT374 where the LET threshold was four times greater than for the 54F374, while the SEU cross section was slightly less. These results indicate substantial improvement in SEU rejection by the 54AHCT family over advanced TTL.
Advantage of advanced CMOS over advanced TTL in a cosmic ray environment
Vorteile von Advanced CMOS im Vergleich zu Advanced TTL bei Schaedigung durch kosmische Strahlung
IEEE Transactions on Nuclear Science ; NS-34 , 6, PT.1 ; 1338-1340
1987
3 Seiten, 6 Quellen
Article (Journal)
English
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