The authors have fabricated Ge:Ga far-infrared photoconductors with the dimension of 0,5x0,5x0,5 mm. From the responsivity and hole mobility value, they estimated the hole Liftime in Ge:Ga crystal at low temperature and under low background photon influx. They ascertain that the increase of responsivity with rising operating temperature is due to the increase in hole lifetime. The moderate-fast transient response of the Ge:Ga photoconductor that we found from the curve fitting is one of the dominating components in the transient response. The fraction of this response decreases as the bias field increases. Moreover, the time constant of the moderate-fast transient response become shorter as the operating temperature rises and bias field increases. They found this time constant to be in agreement with the time constant of their mathematical model. It should be useful for the optimization of detector system performance to make clear the characteristics of the moderate-fast transient response component.
Moderate-fast transient response of the Ge:Ga photoconductors
Die Löcher-Lebensdauer von Ge:Ga-Photowiderständen für tiefes Infrarot für astronomische Anwendungen im Weltraum und Temperaturen um 100 K und die Auswirkungen auf das Zeitverhalten
1995
9 Seiten, 11 Bilder
Conference paper
English
Infrarottechnik , Infrarotdetektor , Strahlungsdetektor , Photowiderstand , lichtempfindliches Halbleiterbauelement , Zeitverhalten , dynamische Charakteristik , Germanium , Gallium , Tieftemperatur , Tieftemperaturphysik , n-Halbleiter , Ladungsträger , Ladungsträgerlebensdauer , transienter Zustand , Photon , Weltraum , Rauschquelle , Rauschtemperatur , Signal-Rausch-Abstand
Ge:Ga far-infrared photoconductors for space applications
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