This paper presents results of the complex development of specialized power gate turn-off thyristor (GTO) for pulse currents of 1000 to 1250 and 2000 to 2500 A, repetitive voltages to 2400 and 4000 V, respectively, and associated devices, such as: fast recovery diodes for the same voltages and medium currents from 50 to 500 A and special bipolar transistors for pulse currents of 400 to 600 and 50 V voltage.


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    Title :

    Complete power semiconductor devices for electric vehicle


    Additional title:

    Komplette Leistungshalbleiterbauelemente für elektrische Fahrzeuge


    Contributors:


    Publication date :

    1995


    Size :

    6 Seiten, 6 Bilder, 5 Quellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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