Basic mechanisms and ground-test data for radiation effects in solid-state-imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs). For the proton fluxes encountered in the space environment, both transient ionization and displacement damage effects arise from single-particle interactions. In the former case, individual proton tracks will be seen: in the latter, dark-current spikes (or hot pixels) and trapping states that cause degradation in charge-transfer efficiency will be observed. Proton-induced displacement damage effects on dark current and charge transfer are considered in detail, and the practical implications for shielding, device hardening, and ground testing are discussed.


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    Title :

    Proton effects in charge-coupled devices


    Additional title:

    Protoneneffekte in ladungsgekoppelten Schaltungen


    Contributors:

    Published in:

    IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 614-627


    Publication date :

    1996


    Size :

    14 Seiten, 12 Bilder, 1 Tabelle, 76 Quellen




    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English





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