In this paper the successfull fabrication of single junction GaInP2 cells with an excellent uniformity in cell performance across 2' wafers will be reported. An average efficiency of 15.1 % (with the best cell efficiency at 15.3 %) under 1 sun AMO illumination have been demonstrated on total tested areas of more than 15 cm2. We also report electron radiation experiment results using 0.7, 1.0 and 2.0 MeV energies at fluences as high as 1x1016cm-2. The results indicate excellent resistance in GaInP2 cells. The damage coefficients of GaInP2 single junction cell deduced from this experiment, have been used to further refine our prediction for the performance of the tandem cell. The results indicate that the GaInP2/GaAs tandem cell is capable of producing a minimum average cell efficiency over 25 % at the beginning-of-life (BOL) with more than 82 % remaining power after 1x1015cm-2, 1 MeV electron irradiation.
Large area GaInP2/GaAs tandem cell development for space power systems
Großflächige GaInP2/GaAs-Tandemzelle für den Einsatz in energietechnischen Weltraumsystemen
1993
6 Seiten, 14 Bilder, 4 Tabellen, 4 Quellen
Conference paper
English
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