Since the introduction of the first practical power MOSFET(s) in the early 1970's these devices have undergone major performance improvements. The electrical characteristics have been further enhanced due to the demanding and critical requirements of manned space applications. Fast switching speeds at high frequencies of up to 100 kHz with minimum parasitic inductance leakage losses, including an on-state-channel resistance of 6 mohms (RDSON, are the key driving factors which led to developing large size 9 and 10 die (instead of the conventional hex 5 and 6 size die currently available) in designing a super N-channel, metal-oxide semiconductor field-effect transistor (MOSFET). This paper outlines the design manufacturing, processing, and testing of special super MOSFET die sizes 9 and 10 (approximately 690 x 500 mils and 1022 x 772 mils, respectively) that were developed specifically to meet the critical and unique requirements of the remote power controller (RPC), the remote bus isolator (RBI), and the DC to DC converter (DDCU) on the Space Station Freedom Power Management and Distribution System. The reliability goal is for a 15-year failure free operation in space.


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    Title :

    Design, development, and qualification of special super n-channel MOSFET die for space applications


    Additional title:

    Entwurf, Entwicklung und Qualifikation von Super-n-Kanal-Mosfet-Chips für die Raumfahrt


    Contributors:


    Publication date :

    1991


    Size :

    5 Seiten, 6 Bilder, 3 Tabellen



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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