The current status of indium phosphide solar cell research is reviewed. In the US program, mainly under the aegis of the NASA Lewis Research Center, efficiencies of 18.8 % were achieved for standard n/p homojunction InP cells while 17 % was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 % are feasible. Initial efforts to produce cheaper, lighter weight and stronger cells are focused toward epitaxial deposition of InP on cheaper, more durable, substrates such as Si. InP solar cells on board the LIPS III satellite show no degradation after more than a year in orbit. Calculated array specific powers are used to estimate the relative performance of arrays containing InP, GaAs and Si, in polar and geosynchronous orbits. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 %. Over 1000 of these latter cells have been manufactured to power a small lunar orbiter on board the Japanese MUSES A satellite.
Indium Phosphid solar cells - recent developments and estimated performance in space
Indiumphosphid-Solarzellen - neuere Entwicklungen und ihr Verhalten im Raum
Space Power ; 9 , 1 ; 3-14
1990
12 Seiten, 10 Bilder, 32 Quellen
Article (Journal)
English
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