Using a fairly comprehensive model, we have done a parametric variation study of the InP shallow homojunction solar cell with a view to determining the maximum realistically achievable efficiency and an optimum design that would yield this efficiency. Our calculations show that with good quality epitaxial material, a BOL efficiency of about 20.3 % at 1AMO, 25 Cel may be possible. The design parameters of the near-optimum cell are given. Also presented are the expected radiation damage of the performance parameters by 1 MeV electrons and a possible explanation of the high radiation tolerance of InP solar cells.
Modelling and design of high efficiency radiation tolerant indium phosphide space solar cells
Modellierung und Entwurf von strahlungsfesten Indiumphosphid-Sonnenzellen mit hohem Wirkungsgrad fuer die Raumfahrt
1987
7 Seiten, 10 Bilder, 5 Tabellen, 10 Quellen
Conference paper
English
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