The paper discusses the main issues for the integration of high-temperature power converters today. Power devices are the key enablers, and GaN and SiC devices are demonstrated. In parallel a large effort has to be dedicated for the development of the passive components and probably the capacitor suffers more limitations than the magnetic counterparts. The integration of the control of the converter is addressed at 2 levels: SOI-CMOS drivers are experimented and GaN and SiC equivalent will be soon available. Digital electronics is also addressed, mostly with SOI technology, however GaN offers large possibilities, and SiC will probably come later.


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    Title :

    Higher temperature power electronics for larger-scale mechatronic integration


    Contributors:
    Allard, B. (author) / Buttay, C. (author) / Tournier, D. (author) / Robutel, R. (author) / Mogniotte, J.F. (author) / Lamelot, P. (author) / Morillon, B. (author) / Godignon, P. (author) / Bergogne, D. (author) / Martin, C. (author)


    Publication date :

    2011


    Size :

    10 Seiten, 14 Bilder, 3 Tabellen, 61 Quellen


    Remarks:

    (nicht paginiert)


    Type of media :

    Conference paper


    Type of material :

    Storage medium


    Language :

    English




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